Datasheet

BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 3 December 2010 2 of 25
NXP Semiconductors
BGA7127
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
2. Pinning information
2.1 Pinning
2.2 Pin description
[1] This pin is DC-coupled and requires an external DC-blocking capacitor.
[2] RF decoupled.
[3] The center metal base of the SOT908-1 also functions as heatsink for the power amplifier.
3. Ordering information
Fig 1. Pin configuration
001aam036
V
CC(BIAS)
SHDNV
CC(RF)
RF_INV
CC(RF)
ICQ_ADJn.c.
Transparent top view
54
63
72
81
terminal 1
index area
BGA7127
GND PAD
n.c.
Table 2. Pin description
Symbol Pin Description
n.c. 1, 4 not connected
V
CC(RF)
2, 3 RF output for the power amplifier and DC supply input for the
RF transistor collector
[1]
V
CC(BIAS)
5 bias supply voltage
[2]
SHDN 6 shutdown control function enabled / disabled
RF_IN 7 RF input for the power amplifier
[1]
ICQ_ADJ 8 quiescent collector current adjustment by an external resistor
GND GND pad RF ground and DC ground
[3]
Table 3. Ordering information
Type number Package
Name Description Version
BGA7127 HVSON8 plastic thermal enhanced very thin small outline
package; no leads; 8 terminals; body 3 × 3 × 0.85 mm
SOT908-1