Datasheet

BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 3 December 2010 16 of 25
NXP Semiconductors
BGA7127
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
2-carrier W-CDMA; each carrier according to 3GPP test
model 1; 64 DPCH; PAR for composite signal = 7.5 dB;
5 MHz carrier spacing.
(1) f = 2110 MHz; ACPR measured at f ± 5 MHz
(2) f = 2170 MHz; ACPR measured at f ± 5 MHz
(3) f = 2110 MHz; ACPR measured at f ± 10 MHz
(4) f = 2170 MHz; ACPR measured at f ± 10 MHz
2-carrier W-CDMA; each carrier according to 3GPP test
model 1; 64 DPCH; PAR for composite signal = 9 dB;
10 MHz carrier spacing.
(1) f = 2110 MHz; ACPR measured at f ± 5 MHz
(2) f = 2170 MHz; ACPR measured at f ± 5 MHz
(3) f = 2110 MHz; ACPR measured at f ± 10 MHz
(4) f = 2170 MHz; ACPR measured at f ± 10 MHz
Fig 25. Adjacent channel power ratio as a function of
average output power
Fig 26. Adjacent channel power ratio as a function of
average output power
P
L(AV)
(dBm)
0252010 155
001aam526
−40
−60
−20
0
ACPR
(dBc)
−80
(1)
(2)(2)
(3)
(4)
P
L(AV)
(dBm)
0252010 155
001aam527
0
ACPR
(dBc)
−20
−40
−60
−70
−50
−30
−10
(1)
(2)(2)
(3)
(4)
f = 2140 MHz; tone spacing = 1 MHz.
(1) Upper sideband
(2) Lower sideband
Fig 27. Output third-order intercept point as a function of output power per tone
P
L
(dBm) per tone
10 221814
001aam528
39
41
43
IP3
o
(dBm)
37
(1)
(2)