Datasheet

BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 3 December 2010 15 of 25
NXP Semiconductors
BGA7127
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
(1) T
case
= 25 °C
(2) T
case
= 85 °C
(3) T
case
= −40 °C
(1) T
case
= 25 °C
(2) T
case
= 85 °C
(3) T
case
= −40 °C
Fig 21. Output power at 1 dB gain compression as a
function of frequency
Fig 22. Power gain as a function of frequency
001aam121
f (GHz)
2.11 2.172.152.13
26
28
24
30
32
P
L(1dB)
(dBm)
22
(1)
(2)
(3)
001aam122
f (GHz)
2.11 2.172.152.13
12
14
10
16
18
G
p
(dB)
8
(1)
(2)
(3)
T
case
= 25 °C.
(1) RL
in
(2) RL
out
(3) ISL
P
L
= 17 dBm; tone spacing = 1 MHz.
(1) T
case
= 25 °C
(2) T
case
= 85 °C
(3) T
case
= −40 °C
Fig 23. Input return loss, output return loss and
isolation as a function of frequency
Fig 24. Output third-order intercept point as a function
of frequency
f (GHz)
2.11 2.172.152.13
001aam123
−20
−10
0
−30
(1)
(2)
(3)
RL
in
, RL
out
, ISL
(dB)
001aam124
f (GHz)
2.11 2.172.152.13
40
42
38
44
46
IP3
O
(dBm)
36
(1)
(2)
(3)