Datasheet

BFU725F_N1_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 13 July 2009 7 of 11
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
V
CE
=2V; I
C
= 5 mA; T
amb
=25°C. V
CE
=2V; I
C
= 25 mA; T
amb
=25°C.
Fig 7. Gain as a function of frequency; typical values Fig 8. Gain as a function of frequency; typical values
V
CE
=2V; T
amb
=25°C.
(1) f = 12 GHz
(2) f = 5.8 GHz
(3) f = 2.4 GHz
(4) f = 1.8 GHz
(5) f = 1.5 GHz
V
CE
=2V; T
amb
=25°C.
(1) I
C
=25mA
(2) I
C
=5mA
Fig 9. Minimum noise figure as a function of
collector current; typical values
Fig 10. Minimum noise figure as a function of
frequency; typical values
001aah430
20
30
10
40
50
G
(dB)
0
f (GHz)
10
−2
10
2
1010
−1
1
MSG
IS21I
2
MSG
G
p(max)
001aah431
20
30
10
40
50
G
(dB)
0
f (GHz)
10
−2
10
2
1010
−1
1
MSG
MSG
IS21I
2
G
p(max)
001aah432
I
C
(mA)
0302010
0.8
1.2
0.4
1.6
2.0
NF
min
(dB)
0
(3)
(4)
(5)
(1)
(2)
f (GHz)
0161248
001aah433
0.8
1.2
0.4
1.6
2.0
NF
min
(dB)
0
(1)
(2)