Datasheet

BFU725F_N1_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 13 July 2009 6 of 11
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
f = 1 MHz, T
amb
=25°C. V
CE
= 2 V; f = 2 GHz; T
amb
=25°C.
Fig 4. Collector-base capacitance as a function of
collector-base voltage; typical values
Fig 5. Transition frequency as a function of collector
current; typical values
V
CE
=2V; T
amb
=25°C.
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 5.8 GHz
(5) f = 12 GHz
Fig 6. Gain as a function of collector current; typical value
001aah427
V
CB
(V)
01284
80
40
120
160
C
CBS
(fF)
0
I
C
(mA)
0403010 20
001aak273
20
40
60
f
T
(GHz)
0
001aah429
I
C
(mA)
10
−1
10
2
101
10
10
2
G
(dB)
1
(1)
(2)
(3)
(4)
(5)
MSG
MSG
G
max
G
max