Datasheet

BFU725F_N1_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 13 July 2009 5 of 11
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
[1] G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= MSG.
P
L(1dB)
output power at 1 dB gain
compression
I
C
= 25 mA; V
CE
=2V; Z
S
=Z
L
=50Ω; T
amb
=25°C
f = 1.5 GHz - 8.5 - dBm
f = 1.8 GHz - 9 - dBm
f = 2.4 GHz - 8.5 - dBm
f = 5.8 GHz - 8 - dBm
IP3 third-order intercept point I
C
= 25 mA; V
CE
=2V; Z
S
=Z
L
=50Ω; T
amb
=25°C;
f
2
=f
1
+ 1 MHz
f
1
= 1.5 GHz - 17 - dBm
f
1
= 1.8 GHz - 17 - dBm
f
1
= 2.4 GHz - 17 - dBm
f
1
= 5.8 GHz - 19 - dBm
Table 7. Characteristics
…continued
T
j
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
T
amb
=25°C.
(1) I
B
= 110 µA
(2) I
B
= 100 µA
(3) I
B
=90µA
(4) I
B
=80µA
(5) I
B
=70µA
(6) I
B
=60µA
(7) I
B
=50µA
(8) I
B
=40µA
(9) I
B
=30µA
(10) I
B
=20µA
(11) I
B
=10µA
T
amb
=25°C.
(1) V
CE
=1V
(2) V
CE
= 1.5 V
(3) V
CE
=2V
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
Fig 3. DC current gain a function of collector current;
typical values
V
CE
(V)
0 2.50.5 2.0 3.01.51.0 3.5
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10
20
30
I
C
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
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I
C
(mA)
0302010
300
250
350
400
h
FE
200
(1)
(2)
(3)