Datasheet

BFU725F_N1_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 13 July 2009 4 of 11
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
7. Characteristics
Table 7. Characteristics
T
j
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)CBO
collector-base breakdown
voltage
I
C
= 2.5 µA; I
E
= 0 mA 10 - - V
V
(BR)CEO
collector-emitter breakdown
voltage
I
C
= 1 mA; I
B
= 0 mA 2.8 - - V
I
C
collector current -2540mA
I
CBO
collector-base cut-off current I
E
= 0 mA; V
CB
= 4.5 V - - 100 nA
h
FE
DC current gain I
C
= 10 mA; V
CE
= 2 V 160 280 400
C
CES
collector-emitter capacitance V
CB
= 2 V; f = 1 MHz - 268 - fF
C
EBS
emitter-base capacitance V
EB
= 0.5 V; f = 1 MHz - 400 - fF
C
CBS
collector-base capacitance V
CB
= 2 V; f = 1 MHz - 70 - fF
f
T
transition frequency I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz; T
amb
=25°C - 55 - GHz
G
p(max)
maximum power gain I
C
= 25 mA; V
CE
=2V; T
amb
=25°C
[1]
f = 1.5 GHz - 28 - dB
f = 1.8 GHz - 27 - dB
f = 2.4 GHz - 25.5 - dB
f = 5.8 GHz - 18 - dB
f = 12 GHz - 13 - dB
|s
21
|
2
insertion power gain I
C
= 25 mA; V
CE
=2V; T
amb
=25°C
f = 1.5 GHz - 26.7 - dB
f = 1.8 GHz - 25.4 - dB
f = 2.4 GHz - 23 - dB
f = 5.8 GHz - 16 - dB
f = 12 GHz - 9.3 - dB
NF noise figure I
C
= 5 mA; V
CE
=2V;Γ
S
= Γ
opt
; T
amb
=25°C
f = 1.5 GHz - 0.42 - dB
f = 1.8 GHz - 0.43 - dB
f = 2.4 GHz - 0.47 - dB
f = 5.8 GHz - 0.7 - dB
f = 12 GHz - 1.1 - dB
G
ass
associated gain I
C
= 5 mA; V
CE
=2V;Γ
S
= Γ
opt
; T
amb
=25°C
f = 1.5 GHz - 24 - dB
f = 1.8 GHz - 22 - dB
f = 2.4 GHz - 20 - dB
f = 5.8 GHz - 13.5 - dB
f = 12 GHz - 10 - dB