Datasheet

BFU725F_N1_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 13 July 2009 3 of 11
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
5. Limiting values
[1] T
sp
is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 10 V
V
CEO
collector-emitter voltage open base - 2.8 V
V
EBO
emitter-base voltage open collector - 0.55 V
I
C
collector current - 40 mA
P
tot
total power dissipation T
sp
≤ 90 °C
[1]
- 136 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point 440 K/W
Fig 1. Power derating curve
T
sp
(°C)
0 16012040 80
001aah424
100
50
150
200
P
tot
(mW)
0