Datasheet

BFU725F_N1_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 13 July 2009 2 of 11
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
[1] T
sp
is the temperature at the solder point of the emitter lead.
[2] G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG).
2. Pinning information
3. Ordering information
4. Marking
C
CBS
collector-base
capacitance
V
CB
= 2 V; f = 1 MHz - 70 - fF
f
T
transition frequency I
C
= 25 mA; V
CE
=2V;
f = 2 GHz; T
amb
=25°C
- 55 - GHz
G
p(max)
maximum power gain I
C
= 25 mA; V
CE
=2V;
f = 5.8 GHz; T
amb
=25°C
[2]
-18- dB
NF noise figure I
C
= 5 mA; V
CE
=2V;
f = 5.8 GHz; Γ
S
= Γ
opt
;
T
amb
=25°C
- 0.7 - dB
Table 1. Quick reference data
…continued
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Discrete pinning
Pin Description Simplified outline Graphic symbol
1 emitter
2 base
3 emitter
4 collector
12
34
mbb159
4
1, 3
2
Table 3. Ordering information
Type number Package
Name Description Version
BFU725F/N1 - plastic surface-mounted flat pack package; reverse
pinning; 4 leads
SOT343F
Table 4. Marking
Type number Marking Description
BFU725F/N1 B7* * = p : made in Hong Kong
* = t : made in Malaysia
* = W : made in China