Datasheet
BFU550 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 5 March 2014 8 of 22
NXP Semiconductors
BFU550
NPN wideband silicon RF transistor
T
amb
=25C.
(1) V
CE
=3.0V
(2) V
CE
=8.0V
T
amb
=25C.
(1) V
CE
=3.0V
(2) V
CE
=8.0V
Fig 5. Collector current as a function of base-emitter
voltage; typical values
Fig 6. Base current as a function of base-emitter
voltage; typical values
V
CE
=3V.
(1) T
amb
= 40 C
(2) T
amb
= +25 C
(3) T
amb
= +125 C
I
C
= 0 mA; f = 1 MHz; T
amb
=25C.
Fig 7. Reverse base current as a function of
emitter-base voltage; typical values
Fig 8. Collector capacitance as a function of
collector-base voltage; typical values
DDD
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