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BFU550 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.

Product data sheet Rev. 1 — 5 March 2014 5 of 22

NXP Semiconductors

BFU550

NPN wideband silicon RF transistor

G

p(max)

maximum power gain f = 433 MHz; V

CE

=8V

[1]

I

C

=1mA - 15 - dB

I

C

= 15 mA - 25.5 - dB

I

C

= 25 mA - 26.5 - dB

f = 900 MHz; V

CE

=8V

[1]

I

C

= 1 mA - 12.5 - dB

I

C

=15mA - 21 - dB

I

C

= 25 mA - 21.5 - dB

f = 1800 MHz; V

CE

=8V

[1]

I

C

=1mA - 10 - dB

I

C

=15mA - 15 - dB

I

C

=25mA - 15 - dB

s

21



2

insertion power gain f = 433 MHz; V

CE

=8V

I

C

=1mA - 10 - dB

I

C

=15mA - 23 - dB

I

C

= 25 mA - 23.5 - dB

f = 900 MHz; V

CE

=8V

I

C

=1mA - 8 - dB

I

C

= 15 mA - 17.5 - dB

I

C

=25mA - 18 - dB

f = 1800 MHz; V

CE

=8V

I

C

=1mA - 4.5 - dB

I

C

=15mA - 11.5 - dB

I

C

=25mA - 12 - dB

NF

min

minimum noise figure f = 433 MHz; V

CE

=8V; 

S

= 

opt

I

C

=1mA - 0.55 - dB

I

C

= 15 mA - 0.9 - dB

I

C

= 25 mA - 1.1 - dB

f = 900 MHz; V

CE

=8V; 

S

= 

opt

I

C

=1mA - 0.7 - dB

I

C

= 15 mA - 0.95 - dB

I

C

= 25 mA - 1.2 - dB

f = 1800 MHz; V

CE

=8V; 

S

= 

opt

I

C

=1mA - 1 - dB

I

C

= 15 mA - 1.1 - dB

I

C

= 25 mA - 1.3 - dB

Table 9. Characteristics

…continued

T

amb

=25



C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit