Datasheet

BFU550 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 5 March 2014 12 of 22
NXP Semiconductors
BFU550
NPN wideband silicon RF transistor
V
CE
= 8 V; 40 MHz  f  3 GHz.
(1) I
C
= 15 mA
(2) I
C
= 25 mA
Fig 16. Input reflection coefficient (s
11
); typical values
V
CE
= 8 V; 40 MHz  f  3 GHz.
(1) I
C
= 15 mA
(2) I
C
= 25 mA
Fig 17. Output reflection coefficient (s
22
); typical values
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