Datasheet

BFU520 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2 — 5 March 2014 9 of 22
NXP Semiconductors
BFU520
NPN wideband silicon RF transistor
T
amb
=25C.
(1) V
CE
=3.3V
(2) V
CE
=5.0V
(3) V
CE
=8.0V
(4) V
CE
= 12.0 V
Fig 9. Transition frequency as a function of collector current; typical values
I
C
=5mA; V
CE
=8V; T
amb
=25C. I
C
=10mA; V
CE
=8V; T
amb
=25C.
Fig 10. Gain as a function of frequency; typical values Fig 11. Gain as a function of frequency; typical values
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