Datasheet

BFU520 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2 — 5 March 2014 7 of 22
NXP Semiconductors
BFU520
NPN wideband silicon RF transistor
9.1 Graphs
T
amb
=25C.
(1) I
B
=25A
(2) I
B
=75A
(3) I
B
= 125 A
(4) I
B
= 175 A
(5) I
B
= 225 A
(6) I
B
= 275 A
(7) I
B
= 325 A
Fig 2. Collector current as a function of collector-emitter voltage; typical values
T
amb
=25C.
(1) V
CE
=3.0V
(2) V
CE
=8.0V
V
CE
=8V.
(1) T
amb
= 40 C
(2) T
amb
= +25 C
(3) T
amb
= +125 C
Fig 3. DC current gain as function of collector
current; typical values
Fig 4. DC current gain as function of collector
current; typical values
DDD
        





9
&(
9
,
&
,
&
P$P$P$







DDD
      







,
&
P$
K
)()(
K
)(


DDD
      







,
&
P$
K
)()(
K
)(


