Datasheet

BFU520 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2 — 5 March 2014 6 of 22
NXP Semiconductors
BFU520
NPN wideband silicon RF transistor
[1] If K > 1 then G
p(max)
is the maximum power gain. If K  1 then G
p(max)
=MSG.
G
ass
associated gain f = 433 MHz; V
CE
=8V; 
S
= 
opt
I
C
=1mA - 26 - dB
I
C
= 5 mA - 25.5 - dB
I
C
=10mA - 26 - dB
f = 900 MHz; V
CE
=8V; 
S
= 
opt
I
C
=1mA - 18 - dB
I
C
=5mA - 19 - dB
I
C
=10mA - 20 - dB
f = 1800 MHz; V
CE
=8V; 
S
= 
opt
I
C
= 1 mA - 11.5 - dB
I
C
= 5 mA - 13.5 - dB
I
C
=10mA - 14 - dB
P
L(1dB)
output power at 1 dB gain compression f = 433 MHz; V
CE
=8V; Z
S
=Z
L
=50
I
C
=5mA - 1 - dBm
I
C
= 10 mA - 5.5 - dBm
f = 900 MHz; V
CE
=8V; Z
S
=Z
L
=50
I
C
=5mA - 2 - dBm
I
C
= 10 mA - 6.5 - dBm
f = 1800 MHz; V
CE
=8V; Z
S
=Z
L
=50
I
C
=5mA - 2 - dBm
I
C
=10mA - 7 - dBm
IP3
o
output third-order intercept point f
1
= 433 MHz; f
2
= 434 MHz; V
CE
=8V;
Z
S
=Z
L
=50
I
C
= 5 mA - 10.5 - dBm
I
C
=10mA - 15 - dBm
f
1
= 900 MHz; f
2
= 901 MHz; V
CE
=8V;
Z
S
=Z
L
=50
I
C
= 5 mA - 11.5 - dBm
I
C
=10mA - 16 - dBm
f
1
= 1800 MHz; f
2
=1801MHz;
V
CE
=8V; Z
S
=Z
L
=50
I
C
= 5 mA - 11.5 - dBm
I
C
= 10 mA - 16.5 - dBm
Table 9. Characteristics …continued
T
amb
=25  C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit