Datasheet

BFU520 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2 — 5 March 2014 2 of 22
NXP Semiconductors
BFU520
NPN wideband silicon RF transistor
[1] T
sp
is the temperature at the solder point of the collector lead.
[2] If K > 1 then G
p(max)
is the maximum power gain. If K  1 then G
p(max)
=MSG.
2. Pinning information
3. Ordering information
[1] The customer evaluation kit contains the following:
a) Unpopulated RF amplifier Printed-Circuit Board (PCB)
b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
d) BFU520, BFU530 and BFU550 samples
e) USB stick with data sheets, application notes, models, S-parameter and noise files
4. Marking
G
p(max)
maximum power gain I
C
=5mA; V
CE
= 8 V; f = 900 MHz
[2]
-20- dB
NF
min
minimum noise figure I
C
=1mA; V
CE
= 8 V; f = 900 MHz; 
S
= 
opt
-0.65- dB
P
L(1dB)
output power at 1 dB gain
compression
I
C
=10mA; V
CE
=8V; Z
S
=Z
L
=50;
f=900MHz
-6.5- dBm
Table 1. Quick reference data
…continued
T
amb
=25  C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Discrete pinning
Pin Description Simplified outline Graphic symbol
1 collector
2base
3emitter
4emitter


DDD



Table 3. Ordering information
Type number Package
Name Description Version
BFU520 - plastic surface-mounted package; 4 leads SOT143B
OM7962 - Customer evaluation kit for BFU520, BFU530 and BFU550
[1]
-
Table 4. Marking
Type number Marking Description
BFU520 *TA * = t : made in Malaysia
* = w : made in China