Datasheet

BFU520 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2 — 5 March 2014 14 of 22
NXP Semiconductors
BFU520
NPN wideband silicon RF transistor
V
CE
=8V; T
amb
=25C; 
S
= 
opt
.
(1) f = 433 MHz
(2) f = 900 MHz
(3) f = 1800 MHz
V
CE
=8V; T
amb
=25C; 
S
= 
opt
.
(1) I
C
=1mA
(2) I
C
=2mA
(3) I
C
=3mA
(4) I
C
=5mA
(5) I
C
=8mA
(6) I
C
=10mA
(7) I
C
=15mA
(8) I
C
=20mA
Fig 22. Minimum noise figure as a function of
collector current; typical values
Fig 23. Minimum noise figure as a function of
frequency; typical values
DDD
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

,
&
P$
1)1)
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1)
PLQ
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
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DDD
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
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
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I0+]
1)1)
PLQPLQ
1)
PLQ
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