Datasheet
BFU520 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2 — 5 March 2014 12 of 22
NXP Semiconductors
BFU520
NPN wideband silicon RF transistor
V
CE
= 8 V; 40 MHz f 3 GHz.
(1) I
C
=5 mA
(2) I
C
= 10 mA
Fig 16. Input reflection coefficient (s
11
); typical values
V
CE
= 8 V; 40 MHz f 3 GHz.
(1) I
C
=5 mA
(2) I
C
= 10 mA
Fig 17. Output reflection coefficient (s
22
); typical values
DDD
DDD