Datasheet

BFU520 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2 — 5 March 2014 11 of 22
NXP Semiconductors
BFU520
NPN wideband silicon RF transistor
I
C
=10mA; T
amb
=25C.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
I
C
=10mA; T
amb
=25C.
If K >1 then G
p(max)
= maximum power gain. If K < 1 then
G
p(max)
= MSG.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 14. Insertion power gain as a function of
collector-emitter voltage; typical values
Fig 15. Maximum power gain as a function of
collector-emitter voltage; typical values
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