Datasheet
BFU520 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2 — 5 March 2014 10 of 22
NXP Semiconductors
BFU520
NPN wideband silicon RF transistor
V
CE
=8V; T
amb
=25C.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
V
CE
=8V; T
amb
=25C.
If K >1 then G
p(max)
= maximum power gain. If K < 1 then
G
p(max)
= MSG.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 12. Insertion power gain as a function of collector
current; typical values
Fig 13. Maximum power gain as a function of collector
current; typical values
DDD
,
&
P$
_V_V
_
_V
_
G%G%G%
DDD
,
&
P$
*
SPD[SPD[
*
SPD[
G%G%G%