Datasheet

November 1992 4
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFT93
CHARACTERISTICS
T
j
= 25 C unless otherwise specified.
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2. d
im
= 60 dB (DIN 45004B); I
C
= 30 mA; V
CE
= 5 V; R
L
=75;
V
p
=V
o
at d
im
= 60 dB; f
p
= 495.25 MHz;
V
q
=V
o
6 dB; f
q
= 503.25 MHz;
V
r
=V
o
6 dB; f
r
= 505.25 MHz;
measured at f
(pqr
) = 493.25 MHz.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= 5 V  50 nA
h
FE
DC current gain I
C
= 30 mA; V
CE
= 5 V 20 50 
f
T
transition frequency I
C
= 30 mA; V
CE
= 5 V;
f = 500 MHz
 5  GHz
C
c
collector capacitance I
E
=i
e
=0; V
CB
= 10 V; f = 1 MHz  0.95  pF
C
e
emitter capacitance I
c
=i
c
=0;V
EB
= 0.5 V; f = 1 MHz  1.8  pF
C
re
feedback capacitance I
C
= 2 mA; V
CE
= 5V; f = 1 MHz  1  pF
G
UM
maximum unilateral power gain
(note 1)
I
C
= 30 mA; V
CE
= 5V;
f = 500 MHz; T
amb
=25C
 16.5  dB
Fnoise figure I
C
= 10 mA; V
CE
= 5V;
f = 500 MHz; T
amb
=25C
 2.4  dB
V
o
output voltage see Fig.2 and note 2  300  mV
G
UM
10 log
S
21
2
1S
11
2
–1S
22
2
–
----------------------------------------------------------
dB.=