Datasheet

November 1992 2
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFT93
DESCRIPTION
PNP transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,
etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
NPN complements are BFR93 and
BFR93A.
PINNING
PIN DESCRIPTION
Code: X1p
1base
2emitter
3 collector
Fig.1 SOT23.
lfpage
MSB003 Top view
12
3
QUICK REFERENCE DATA
Note
1. T
s
is the temperature at the soldering point of the collector tab.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter 15 V
V
CEO
collector-emitter voltage open base 12 V
I
c
DC collector current 35 mA
P
tot
total power dissipation up to T
s
=95 C; note 1  300 mW
f
T
transition frequency I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz;
T
j
=25C
5  GHz
C
re
feedback capacitance I
C
= 2mA; V
CE
= 5V; f = 1 MHz 1  pF
G
UM
maximum unilateral power gain I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
=25C
16.5  dB
Fnoise figure I
C
= 10 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
=25C
2.4  dB
V
o
output voltage d
im
= 60 dB; I
C
= 30 mA;
V
CE
= 5 V; R
L
=75 ;
f
(pqr)
= 493.25 MHz
300  mV