Datasheet
November 1992 5
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFT92
Fig.2 Intermodulation distortion test circuit.
L2 = L3 = 5 H Ferroxcube choke, catalogue
number 3122 108 20150.
L1 = 4 turns 0.35 mm copper wire;
winding pitch 1 mm; internal diameter 4 mm.
handbook, halfpage
MEA919
16 Ω
L2
680 pF
300 Ω
DUT
L1
680 pF
680 pF
24 V
3.9 kΩ
820
Ω
75 Ω
75 Ω
390 Ω
L3
Fig.3 DC current gain as a function of collector
current.
V
CE
= 10 V; T
j
=25 C.
handbook, halfpage
MEA347
0
100
75
25
0
10 20
–I (mA)
C
FE
h
50
30
Fig.4 Collector capacitance as a function of
collector-base voltage.
I
E
=i
e
= 0; f = 1 MHz; T
j
= 25 C.
handbook, halfpage
010
1
0
0.8
MEA920
0.6
0.4
0.2
C
c
(pF)
–V
CB
(V)
20
Fig.5 Transition frequency as a function of
collector current.
V
CE
= 10 V; f = 500 MHz; T
j
=25 C.
handbook, halfpage
0102030
6
0
2
4
MEA344
–I (mA)
C
f
T
(GHz)