Datasheet

November 1992 3
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFT92
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. T
s
is the temperature at the soldering point of the collector tab.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter 20 V
V
CEO
collector-emitter voltage open base 15 V
V
EBO
emitter-base voltage open collector 2V
I
C
DC collector current 25 mA
I
CM
peak collector current f  1 MHz 35 mA
P
tot
total power dissipation up to T
s
=95C; note 1  300 mW
T
stg
storage temperature 65 150 C
T
j
junction temperature  175 C
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-s
thermal resistance from junction to
soldering point
up to T
s
=95 C; note 1 260 K/W