Datasheet

BFT25A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 12 September 2011 5 of 15
NXP Semiconductors
BFT25A
NPN 5 GHz wideband transistor
V
CE
= 1 V; f = 500 MHz. V
CE
= 1 V; f = 1 GHz.
Fig 5. Gain as a function of collector current. Fig 6. Gain as a function of collector current.
0 0.5 1.0 2.0
25
0
10
mcd104
1.5
20
15
5
MSG
G
UM
gain
(dB)
I
C
(mA)
0 0.5 1.0 2.0
0
10
mcd105
1.5
20
15
5
MSG
G
UM
gain
(dB)
I
C
(mA)
V
CE
=1 V; I
C
= 0.5 mA. V
CE
=1 V; I
C
= 1 mA.
Fig 7. Gain as a function of frequency. Fig 8. Gain as a function of frequency.
mcd106
50
40
30
20
10
0
gain
(dB)
f (MHz)
MSG
G
UM
G
max
10 10
2
10
3
10
4
mcd107
50
40
30
20
10
0
gain
(dB)
f (MHz)
MSG
G
UM
G
max
10 10
2
10
3
10
4