Datasheet
BFT25A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 12 September 2011 4 of 15
NXP Semiconductors
BFT25A
NPN 5 GHz wideband transistor
Figure 5, 6, 7 and 8, G
UM
= maximum unilateral power gain; MSG = maximum stable gain.
V
CE
=1 V.
Fig 1. Power derating curve. Fig 2. DC current gain as a function of collector
current.
0 50 100 200
40
30
10
0
20
mbg247
150
P
tot
(mW)
T
s
(°C)
mcd138
0
100
20
40
60
80
h
FE
I
C
(mA)
10
−2
10
−3
10
−1
1
10
I
C
= i
c
= 0 A; f = 1 MHz. V
CE
=1 V; T
amb
=25C; f = 500 MHz.
Fig 3. Feedback capacitance as a function of
collector-base voltage.
Fig 4. Transition frequency as a function of collector
current.
0
5
0.4
0.3
0.1
0
0.2
mcd103
1234
C
re
(pF)
V
CB
(V)
0
6
4
2
0
12 4
mcd140
3
I
C
(mA)
f
T
(GHz)