Datasheet

1999 Apr 21 2
NXP Semiconductors Product data sheet
NPN medium frequency transistor BFS20W
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 20 V).
• Very low feedback capacitance (typ. 350 fF).
APPLICATIONS
• IF and VHF applications in thick and thin-film circuits.
DESCRIPTION
NPN medium frequency transistor in a SOT323 (SC-70)
plastic package.
MARKING
Note
1. ∗ = -: Made in Hong Kong.
∗ = t: Made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE
(1)
BFS20W N1∗
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT323; SC-70) and
symbol.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 30 V
V
CEO
collector-emitter voltage open base − 20 V
V
EBO
emitter-base voltage open collector − 4 V
I
C
collector current (DC) − 25 mA
I
CM
peak collector current − 25 mA
I
BM
peak base current − 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C