Datasheet

2004 Feb 05 3
NXP Semiconductors Product data sheet
NPN medium frequency transistor BFS20
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current I
E
= 0; V
CB
= 20 V − − 100 nA
I
E
= 0; V
CB
= 20 V; T
j
= 100 °C − − 10 µA
I
EBO
emitter-base cut-off current I
C
= 0; V
EB
= 4 V − − 100 nA
h
FE
DC current gain I
C
= 7 mA; V
CE
= 10 V 40 85 −
V
BE
base-emitter voltage I
C
= 7 mA; V
CE
= 10 V − 740 900 mV
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz − 1 − pF
C
re
feedback capacitance I
C
= 0; V
CB
= 10 V; f = 1 MHz − 350 − fF
f
T
transition frequency I
C
= 5 mA; V
CE
= 10 V; f = 100 MHz 275 450 − MHz