Datasheet

2004 Feb 05 2
NXP Semiconductors Product data sheet
NPN medium frequency transistor BFS20
FEATURES
• I
C(max)
= 25 mA
• V
CEO(max)
= 20 V
• Very low feedback capacitance (typ. 350 fF).
APPLICATIONS
• IF and VHF thick and thin-film circuit applications.
DESCRIPTION
NPN medium frequency transistor in a SOT23 plastic
package.
MARKING
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE
(1)
BFS20 G1*
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM255
Top view
2
3
1
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
BFS20 − plastic surface mounted package; 3 leads SOT23
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 30 V
V
CEO
collector-emitter voltage open base − 20 V
V
EBO
emitter-base voltage open collector − 4 V
I
C
collector current (DC) − 25 mA
I
CM
peak collector current − 25 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C