Datasheet

1999 Apr 15 3
Philips Semiconductors Product specification
NPN medium frequency transistor BFS19
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
=20V −−100 nA
I
E
= 0; V
CB
=20V; T
j
= 100 °C −−10 µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
=5 V −−100 nA
h
FE
DC current gain I
C
= 1 mA; V
CE
=10V 65 − 225
V
BE
base-emitter voltage I
C
= 1 mA; V
CE
= 10 V 650 − 740 mV
C
c
collector capacitance I
E
= 0; V
CB
=10V; f=1MHz − 1 − pF
C
re
feedback capacitance I
C
= 0 mA; V
CB
= 10 V; f = 1 MHz − 0.85 − pF
f
T
transition frequency I
C
= 1 mA; V
CE
= 10 V; f = 100 MHz − 260 − MHz