Datasheet

1999 Apr 15 2
Philips Semiconductors Product specification
NPN medium frequency transistor BFS19
FEATURES
• Low current (max. 30 mA)
• Low voltage (max. 20 V).
APPLICATIONS
• Medium frequency applications in thick and thin-film
circuits.
DESCRIPTION
NPN medium frequency transistor in a SOT23 plastic
package.
MARKING
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
TYPE NUMBER MARKING CODE
(1)
BFS19 F2∗
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 30 V
V
CEO
collector-emitter voltage open base − 20 V
V
EBO
emitter-base voltage open collector − 5V
I
C
collector current (DC) − 30 mA
I
CM
peak collector current − 30 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C