Datasheet

1998 Jul 06 5
NXP Semiconductors Product specification
UHF power transistor BFG21W
Fig.4 Common emitter test circuit for class-AB operation at 1.9 GHz.
handbook, full pagewidth
MGM221
V
C
V
S
R1
TR1
L1
L4
L5
C4
C2
DUT
R2
C3
C1
RF input
50 Ω
RF output
50 Ω
L2
L3
C6
R3
C7
C5
List of components used in test circuit (see Figs 4 and 5)
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (
r
=6.15,
tan  = 0.0019); thickness 0.64 mm, copper cladding = 35 m.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1, C5 multilayer ceramic chip capacitor; note 1 24 pF
C2 multilayer ceramic chip capacitor; note 1 3.3 pF
C3, C6 multilayer ceramic chip capacitor, note 1 15 pF
C4 multilayer ceramic chip capacitor; note 1 2.4 pF
C7 multilayer ceramic chip capacitor; note 1 1 nF
L1, L4 stripline; note 2 100  18  0.2 mm
L2 stripline; note 2 50  3.2  0.8 mm
L3 stripline; note 2 50  4.6  0.8 mm
L5 Grade 4S2 Ferroxcube chip bead 4330 030 36300
R1 metal film resistor 220 ; 0.4 W
R2, R3 metal film resistor 10 ; 0.4 W
TR1 NPN transistor BC817 9335 895 20215