Datasheet

1998 Jul 06 4
NXP Semiconductors Product specification
UHF power transistor BFG21W
CHARACTERISTICS
T
j
=25C unless otherwise specified.
APPLICATION INFORMATION
RF performance at T
s
 60 C in a common emitter test circuit (see Figs 4 and 5).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
collector-base breakdown voltage open emitter; I
C
=0.1mA 15  V
V
(BR)CEO
collector-emitter breakdown voltage open base; I
C
=10mA 4.5  V
V
(BR)CER
collector-emitter breakdown voltage R
BE
<1k, I
C
=10mA 10  V
V
(BR)EBO
emitter-base breakdown voltage open collector; I
E
=0.1mA 1  V
I
CES
collector leakage current V
CE
=5V; V
BE
=0  10 A
h
FE
DC current gain I
C
=200mA; V
CE
=2V 40 100
C
c
collector capacitance I
E
=i
e
=0; V
CB
=3V; f=1MHz  3pF
C
re
feedback capacitance I
C
=0; V
CB
=3.6V; f=1MHz  1.5 pF
f
T
transition frequency I
C
=200mA; V
CE
=3.6V;
f = 700 MHz
18  GHz
MODE OF OPERATION
f
(GHz)
V
CE
(V)
I
CQ
(mA)
P
L
(dBm)
G
p
(dB)

C
(%)
Pulsed; class-AB;  <1:2; t
p
=5ms 1.9 3.6 1 26 10 typ. 55
Ruggedness in class-AB operation
The transistor is capable of withstanding a load mismatch
corresponding to VSWR = 6 : 1 through all phases at
26 dBm output power under pulsed conditions:  =1:2;
t
p
= 5 ms; f = 1.9 GHz at V
CE
=4.5V.
Fig.3 Power gain and collector efficiency as a
function of the load power; typical values.
Pulsed, class-AB operation;  <1:2; t
p
=5ms.
f=1.9GHz; V
CE
=3.6V; I
CQ
= 1 mA; tuned at P
L
=26dBm.
handbook, halfpage
5
16
8
12
4
0
80
40
60
20
0
10 30
MGM220
15 20 25
P
L
(dBm)
η
C
(%)
η
C
G
p
(dB)
G
p