Datasheet

1998 Jul 06 3
NXP Semiconductors Product specification
UHF power transistor BFG21W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the emitter pins.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter  15 V
V
CEO
collector-emitter voltage open base  4.5 V
V
EBO
emitter-base voltage open collector  1V
I
C
collector current (DC)  500 mA
P
tot
total power dissipation T
s
 60 C; note 1  600 mW
T
stg
storage temperature 65 +150 C
T
j
operating junction temperature  150 C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to
soldering point
T
s
 60 C; P
tot
= 600 mW; note 1 150 K/W
Fig.2 Transient thermal resistance as a function of pulse time; typical values.
At temperature stabilization solder point has been reached.
handbook, full pagewidth
10
3
10
2
10
1
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
MGM219
R
th
(K/W)
t
p
(s)
t
p
t
p
T
P
t
T
δ =
δ =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0