Datasheet

1998 Jul 06 2
NXP Semiconductors Product specification
UHF power transistor BFG21W
FEATURES
 High power gain
 High efficiency
 1.9 GHz operating area
 Linear and non-linear operation.
APPLICATIONS
 Common emitter class-AB output stage in hand held
radio equipment at 1.9 GHz such as DECT, PHS, etc.
 Driver for DCS1800, 1900.
DESCRIPTION
NPN double polysilicon bipolar power transistor with
buried layer for low voltage medium power applications
encapsulated in a plastic, 4-pin dual-emitter SOT343R
package.
PINNING
PIN DESCRIPTION
1, 3 emitter
2base
4 collector
Fig.1 Simplified outline SOT343R.
Marking code: P1.
handbook, halfpage
Top view MSB842
21
43
QUICK REFERENCE DATA
RF performance at T
s
 60 C in a common emitter test circuit.
MODE OF OPERATION
f
(GHz)
V
CE
(V)
P
L
(dBm)
G
p
(dB)

C
(%)
Pulsed class-AB;  <1:2; t
p
=5ms 1.9 3.6 26 10 typ.55