Datasheet

1999 Apr 15 3
NXP Semiconductors Product data sheet
PNP medium frequency transistor BF824W
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= −30 V − −50 nA
I
E
= 0; V
CB
= −30 V; T
j
= 150 °C − −10 µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −4 V − −100 nA
h
FE
DC current gain I
C
= −1 mA; V
CE
= −10 V 25 −
I
C
= −4 mA; V
CE
= −10 V 25 −
V
BE
base-emitter voltage I
C
= −4 mA; V
CE
= −10 V − −900 mV
C
rb
feedback capacitance I
C
= 0; V
CE
= −10 V; f = 1 MHz − 0.3 pF
f
T
transition frequency V
CE
= −10 V; f = 100 MHz; note 1
I
C
= −1 mA 250 − MHz
I
C
= −4 mA 400 − MHz
I
C
= −8 mA 390 − MHz