Datasheet

1999 Apr 15 2
NXP Semiconductors Product data sheet
PNP medium frequency transistor BF824W
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 30 V).
APPLICATIONS
• RF stages in FM front-ends in common base
configuration.
DESCRIPTION
PNP medium frequency transistor in a SOT323 plastic
package.
MARKING
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE
(1)
BF824W F8∗
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT323) and symbol.
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − −30 V
V
CEO
collector-emitter voltage open base − −30 V
V
EBO
emitter-base voltage open collector − −4 V
I
C
collector current (DC) − −25 mA
I
CM
peak collector current − −25 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C