Datasheet

2004 Jan 16 3
NXP Semiconductors Product data sheet
PNP medium frequency transistor BF824
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − −30 V
V
CEO
collector-emitter voltage open base − −30 V
V
EBO
emitter-base voltage open collector − −4 V
I
C
collector current (DC) − −25 mA
I
CM
peak collector current − −25 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= −30 V − − −50 nA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −4 V − − −100 nA
h
FE
DC current gain I
C
= −1 mA; V
CE
= −10 V 25 45 −
I
C
= −4 mA; V
CE
= −10 V 25 50 −
V
BE
base-emitter voltage I
C
= −4 mA; V
CE
= −10 V − − −900 mV
C
re
feedback capacitance I
C
= 0; V
CE
= −10 V; f = 1 MHz − − 0.3 pF
f
T
transition frequency V
CE
= −10 V; f = 100 MHz
I
C
= −1 mA 250 350 − MHz
I
C
= −4 mA 400 450 − MHz
I
C
= −8 mA 390 440 − MHz