Datasheet

2004 Jan 16 3
NXP Semiconductors Product data sheet
NPN high-voltage transistors BF820; BF822
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF820 − 300 V
BF822 − 250 V
V
CEO
collector-emitter voltage open base
BF820 − 300 V
BF822 − 250 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) − 50 mA
I
CM
peak collector current − 100 mA
I
BM
peak base current − 50 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off current I
E
= 0; V
CB
= 200 V − 10 nA
I
E
= 0; V
CB
= 200 V; T
j
=150 °C − 10 µA
I
EBO
emitter-base cut-off current I
C
= 0; V
EB
= 5 V − 50 nA
h
FE
DC current gain I
C
= 25 mA; V
CE
= 20 V 50 −
V
CEsat
collector-emitter saturation
voltage
I
C
= 30 mA; I
B
= 5 mA − 600 mV
C
re
feedback capacitance I
C
= I
c
= 0; V
CB
= 30 V; f = 1 MHz − 1.6 pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz 60 − MHz