Datasheet

2004 Jan 16 3
NXP Semiconductors Product data sheet
PNP high-voltage transistors BF821; BF823
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF821 − −300 V
BF823 − −250 V
V
CEO
collector-emitter voltage open base
BF821 − −300 V
BF823 − −250 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −50 mA
I
CM
peak collector current − −100 mA
I
BM
peak base current − −50 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off current I
E
= 0; V
CB
= −200 V − −10 nA
I
E
= 0; V
CB
= −200 V; T
j
= 150 °C − −10 µA
I
EBO
emitter-base cut-off current I
C
= 0; V
EB
= −5 V − −50 nA
h
FE
DC current gain I
C
= −25 mA; V
CE
= −20 V 50 −
V
CEsat
collector-emitter saturation voltage I
C
= −30 mA; I
B
= −5 mA − −800 mV
C
re
feedback capacitance I
C
= I
c
= 0; V
CB
= −30 V; f = 1 MHz − 1.6 pF
f
T
transition frequency I
C
= −10 mA; V
CE
= −10 V;
f
= 100 MHz
60 − MHz