Datasheet

2004 Dec 14 7
NXP Semiconductors Product data sheet
NPN high-voltage transistors BF620; BF622
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off current I
E
= 0 A; V
CB
= 200 V − 10 nA
I
E
= 0 A; V
CB
= 200 V; T
j
= 150 °C − 10 µA
I
EBO
emitter-base cut-off current I
C
= 0 A; V
EB
= 5 V − 50 nA
h
FE
DC current gain I
C
= 25 mA; V
CE
= 20 V 50 −
V
CEsat
collector-emitter saturation voltage I
C
= 30 mA; I
B
= 5 mA − 600 mV
C
re
feedback capacitance I
C
= i
c
= 0 A; V
CE
= 30 V; f = 1 MHz − 1.6 pF
f
T
transition frequency I
C
= −10 mA; V
CE
= 10 V; f = 100 MHz 60 − MHz