Datasheet

2004 Dec 14 3
NXP Semiconductors Product data sheet
NPN high-voltage transistors BF620; BF622
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF620 − 300 V
BF622 − 250 V
V
CEO
collector-emitter voltage open base
BF620 − 300 V
BF622 − 250 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) − 50 mA
I
CM
peak collector current − 100 mA
I
BM
peak base current − 50 mA
P
tot
total power dissipation T
amb
≤ 25 °C
note 1 − 0.5 W
note 2 − 0.8 W
note 3 − 1.1 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
ambient temperature −65 +150 °C