Datasheet

2004 Jan 16 4
NXP Semiconductors Product data sheet
PNP general purpose transistors BCX17; BCX18
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
Note
1. V
BE
decreases by approximately −2 mV/°C with increasing temperature.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= −20 V − − −100 nA
I
E
= 0; V
CB
= −20 V; T
j
= 150 °C − − −5 μA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −5 V − − −100 nA
h
FE
DC current gain I
C
= −100 mA; V
CE
= −1 V 100 − 600
I
C
= −300 mA; V
CE
= −1 V 70 − −
I
C
= −500 mA; V
CE
= −1 V 40 − −
V
CEsat
collector-emitter saturation voltage I
C
= −500 mA; I
B
= −50 mA − − −620 mV
V
BE
base-emitter voltage I
C
= −500 mA; V
CE
= −1 V; note 1 − − −1.2 V
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= −10 V; f = 1 MHz − 9 − pF
f
T
transition frequency I
C
= −10 mA; V
CE
= −5 V; f = 100 MHz 80 − − MHz