Datasheet

1999 Apr 15 2
NXP Semiconductors Product data sheet
PNP general purpose transistor BCW89
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
MARKING
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE
(1)
BCW89 H3∗
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM256
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − −80 V
V
CEO
collector-emitter voltage open base; I
C
= −2 mA − −60 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −100 mA
I
CM
peak collector current − −200 mA
I
BM
peak base current − −200 mA
P
tot
total power dissipation T
amb
≤ 25 °C − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C