Datasheet
1999 Apr 19 3
NXP Semiconductors Product data sheet
NPN general purpose transistors BCW71; BCW72
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= 20 V − − 100 nA
I
E
= 0; V
CB
= 20 V; T
j
= 100 °C − − 10 μA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= 5 V − − 100 μA
h
FE
DC current gain I
C
= 10 μA; V
CE
= 5 V
BCW71 − 90 −
BCW72 − 150 −
DC current gain I
C
= 2 mA; V
CE
= 5 V
BCW71 110 − 220
BCW72 200 − 450
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA − 120 250 mV
I
C
= 50 mA; I
B
= 2.5 mA − 210 − mV
V
BEsat
base-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA − 750 − mV
I
C
= 50 mA; I
B
= 2.5 mA − 850 − mV
V
BE
base-emitter voltage I
C
= 2 mA; V
CE
= 5 V 550 − 700 mV
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz − 2.5 − pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz 100 − − MHz
F noise figure I
C
= 200 μA; V
CE
= 5 V; R
S
= 2 kΩ;
f
= 1 kHz; B = 200 Hz
− − 10 dB