Datasheet

2004 Feb 06 3
NXP Semiconductors Product data sheet
PNP general purpose transistors BCW69; BCW70
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= −20 V − − −100 nA
I
E
= 0; V
CB
= −20 V; T
j
= 100 °C − − −10 μA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −5 V − − −100 nA
h
FE
DC current gain I
C
= −10 μA; V
CE
= −5 V
BCW69 − 90 −
BCW70 − 150 −
DC current gain I
C
= −2 mA; V
CE
= −5 V
BCW69 120 − 260
BCW70 215 − 500
V
CEsat
collector-emitter saturation
voltage
I
C
= −10 mA; I
B
= −0.5 mA − −80 −300 mV
I
C
= −50 mA; I
B
= −2.5 mA; note 1 − −150 − mV
V
BEsat
base-emitter saturation voltage I
C
= −10 mA; I
B
= −0.5 mA − −720 − mV
I
C
= −50 mA; I
B
= −2.5 mA; note 1 − −810 − mV
V
BE
base-emitter voltage I
C
= −2 mA; V
CE
= −5 V −600 − −750 mV
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= −10 V;
f
= 1 MHz
− 4.5 − pF
f
T
transition frequency I
C
= −10 mA; V
CE
= −5 V;
f
= 100 MHz
100 − − MHz
F noise figure I
C
= −200 μA; V
CE
= −5 V;
R
S
= 2 kΩ; f = 1 kHz; B = 200 Hz
− − 10 dB