Datasheet

1999 Apr 12 3
NXP Semiconductors Product data sheet
PNP general purpose transistors BCW61 series
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= −32 V − − −20 nA
I
E
= 0; V
CB
= −32 V; T
amb
= 150 °C − − −20 μA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −4 V − − −20 nA
h
FE
DC current gain I
C
= −10 μA; V
CE
= −5 V
BCW61B 30 − −
BCW61C 40 − −
BCW61D 100 − −
DC current gain I
C
= −2 mA; V
CE
= −5 V
BCW61B 180 − 310
BCW61C 250 − 460
BCW61D 380 − 630
DC current gain I
C
= −50 mA; V
CE
= −1 V
BCW61B 80 − −
BCW61C 100 − −
BCW61D 110 − −
V
CEsat
collector-emitter saturation voltage I
C
= −10 mA; I
B
= −0.25 mA −60 − −250 mV
I
C
= −50 mA; I
B
= −1.25 mA −120 − −550 mV
V
BEsat
base-emitter saturation voltage I
C
= −10 mA; I
B
= −0.25 mA −600 − −850 mV
I
C
= −50 mA; I
B
= −1.25 mA −0.68 − −1.05 V
V
BE
base-emitter voltage I
C
= −2 mA; V
CE
= −5 V −600 −650 −750 mV
I
C
= −10 μA; V
CE
= −5 V − −550 − mV
I
C
= −50 mA; V
CE
= −1 V − −720 − mV
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= −10 V; f = 1 MHz − 4.5 − pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= −0.5 V; f = 1 MHz − 11 − pF
f
T
transition frequency I
C
= −10 mA; V
CE
= −5 V;
f
= 100 MHz; note 1
100 − − MHz
F noise figure I
C
= −200 μA; V
CE
= −5 V; R
S
= 2 kΩ;
f
= 1 kHz; B = 200 Hz
− 2 6 dB