Datasheet

1999 Apr 22 3
NXP Semiconductors Product data sheet
NPN general purpose transistors BCW60 series
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= 32 V − − 20 nA
I
E
= 0; V
CB
= 32 V; T
amb
= 150 °C − − 20 μA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= 4 V − − 20 nA
h
FE
DC current gain I
C
= 10 μA; V
CE
= 5 V
BCW60B 20 − −
BCW60C 40 − −
BCW60D 100 − −
DC current gain I
C
= 2 mA; V
CE
= 5 V
BCW60B 180 − 310
BCW60C 250 − 460
BCW60D 380 − 630
DC current gain I
C
= 50 mA; V
CE
= 1 V
BCW60B 70 − −
BCW60C 90 − −
BCW60D 100 − −
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.25 mA 50 − 350 mV
I
C
= 50 mA; I
B
= 1.25 mA 100 − 550 mV
V
BEsat
base-emitter saturation voltage I
C
= 10 mA; I
B
= 0.25 mA 600 − 850 mV
I
C
= 50 mA; I
B
= 1.25 mA 0.7 − 1.05 V
V
BE
base-emitter voltage I
C
= 10 μA; V
CE
= 5 V − 520 − mV
I
C
= 2 mA; V
CE
= 5 V 550 650 750 mV
I
C
= 50 mA; V
CE
= 1 V − 780 − mV
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz − 1.7 − pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz − 11 − pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 5 V;
f
= 100 MHz; note 1
100 250 − MHz
F noise figure I
C
= 200 μA; V
CE
= 5 V;
R
S
= 2 kΩ; f = 1 kHz; B = 200 Hz
− 2 6 dB