Datasheet

2004 Feb 06 2
NXP Semiconductors Product data sheet
NPN general purpose transistors
BCW31; BCW32;
BCW33
FEATURES
• Low current (100 mA)
• Low voltage (32 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistors in a plastic SOT23 package.
PNP
complements: BCW29 and BCW30.
MARKING
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE
(1)
BCW31 D1*
BCW32 D2*
BCW33 D3*
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM255
Top view
2
3
1
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
BCW31 − plastic surface mounted package; 3 leads SOT23
BCW32
BCW33
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 32 V
V
CEO
collector-emitter voltage open base; I
C
= 2 mA − 32 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) − 100 mA
I
CM
peak collector current − 200 mA
I
BM
peak base current − 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C