Datasheet

BCV63_63B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 4 August 2010 2 of 12
NXP Semiconductors
BCV63; BCV63B
NPN general-purpose double transistors
[1] Group selection will be done on TR1. Due to matched dies, h
FE
values for TR2 are the same as for TR1.
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Transistor TR2
V
CEO
collector-emitter voltage open base - - 6 V
h
FE
DC current gain V
CE
=700mV; I
C
=2mA
[1]
BCV63 110 - 800
BCV63B 200 - 450
Table 2. Quick reference data
…continued
Symbol Parameter Conditions Min Typ Max Unit
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1 collector TR2 and base TR1
2 collector TR1
3 emitter TR1 and TR2
4baseTR2
21
34
006aab228
21
34
TR2
TR1
Table 4. Ordering information
Type number Package
Name Description Version
BCV63 - plastic surface-mounted package; 4 leads SOT143B
BCV63B
Table 5. Marking codes
Type number Marking code
[1]
BCV63 *D5
BCV63B *D6